In recent development, the High Electron Mobility Transistor (HEMT) technology was used
for biosensor applications. In this contribution, an analytical model of MgZnO/ZnO …

The detailed analytical model of biosensing parameters was proposed for a double-cavity
graded MgZnO/ZnO metal oxide semiconductor high electron mobility transistor …

Sub-bandgap photodetection with two-dimensional electron-confinement in CdZnO-MgZnO
heterojunction is realized. The reported photodetection is based on metal-less internal …

This article analyzes the direct current and small-signal parameters of MgZnO/ZnO (MZO)
HEMT for microwave application. Further, the impact of the MgO spacer layer on the …

In this work, we report the impact of the ZnO cap layer on mobility (), sheet carrier density (),
and conductance () of dual ion beam sputtering (DIBS) grown MgZnO/CdZnO (MCO) …

This study investigates heterojunction thin-film transistors (HTFTs) with Mg Zn/zinc oxide
(ZnO) heterojunctions deposited using mist chemical vapor deposition (mist-CVD). The X …

We investigate the power switching mechanism to evaluate the power loss (PD) and
efficiency (ɳ) in MgZnO/ZnO (MZO)‐based power heterostructure field effect transistor …

Recent experimental study of electron transport in ZnO/ZnMgO and BeZnMgO/ZnO
heterostructures containing two-dimensional electron gas (2DEG) channels of two polarities …

We investigate the power switching mechanism to evaluate the power loss (PD) and
efficiency (η) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT) …

Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for
applications in spintronics and quantum computing due to the combination of low spin-orbit …