Carbon has long been applied as an electrochemical sensing interface owing to its unique
electrochemical properties. Moreover, recent advances in material design and synthesis …

This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be
driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity …

We study theoretically the low-energy hole states in Si, Ge, and Ge/Si core/shell nanowires
(NWs). The NW core in our model has a rectangular cross section, the results for a square …

We investigate the gate-induced onset of few-electron regime through the undoped channel
of a silicon nanowire field-effect transistor. By combining low-temperature transport …

The implementation of a classical control infrastructure for large-scale quantum computers is
challenging due to the need for integration and processing time, which is constrained by …

We report the single-electron tunneling behaviour of a silicon nanobridge where the
effective island is a single As dopant atom. The device is a gated silicon nanobridge with a …

We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively
standard complementary metal-oxide-semiconductor fabrication techniques. We realize …

We report the fabrication and electrical characterization of single-hole transistors (SHTs), in
which a Ge spherical quantum dot (QD) weakly couples to self-aligned electrodes via self …

Strong, direct Rashba spin-orbit coupling in Si, Ge, and the Ge/Si core/shell nanowire
quantum dot (QD) allows for all electrical manipulation of the hole spin qubit. Motivated by …