[HTML][HTML] Reliability of NAND flash memories: Planar cells and emerging issues in 3D devices

AS Spinelli, C Monzio Compagnoni, AL Lacaita - Computers, 2017 - mdpi.com
We review the state-of-the-art in the understanding of planar NAND Flash memory reliability
and discuss how the recent move to three-dimensional (3D) devices has affected this field …

Error characterization, mitigation, and recovery in flash-memory-based solid-state drives

Y Cai, S Ghose, EF Haratsch, Y Luo… - Proceedings of the …, 2017 - ieeexplore.ieee.org
NAND flash memory is ubiquitous in everyday life today because its capacity has
continuously increased and cost has continuously decreased over decades. This positive …

Irregular-mapped protograph LDPC-coded modulation: A bandwidth-efficient solution for 6G-enabled mobile networks

Y Fang, Y Bu, P Chen, FCM Lau… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The huge amount of data produced in the 6G networks not only brings new challenges to the
reliability and efficiency of mobile devices but also drives rapid development of new storage …

Enabling accurate and practical online flash channel modeling for modern MLC NAND flash memory

Y Luo, S Ghose, Y Cai, EF Haratsch… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
NAND flash memory is a widely used storage medium that can be treated as a noisy
channel. Each flash memory cell stores data as the threshold voltage of a floating gate …

Deep transfer learning-based detection for flash memory channels

Z Mei, K Cai, L Shi, J Li, L Chen… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The NAND flash memory channel is corrupted by different types of noises, such as the data
retention noise and the wear-out noise, which lead to unknown channel offset and make the …

Read and write voltage signal optimization for multi-level-cell (MLC) NAND flash memory

CA Aslam, YL Guan, K Cai - IEEE transactions on …, 2016 - ieeexplore.ieee.org
The multi-level-cell (MLC) NAND flash channel exhibits nonstationary behavior over
increasing program and erase (PE) cycles and data retention time. In this paper, an …

Errors in flash-memory-based solid-state drives: Analysis, mitigation, and recovery

Y Cai, S Ghose, EF Haratsch, Y Luo, O Mutlu - arxiv preprint arxiv …, 2017 - arxiv.org
NAND flash memory is ubiquitous in everyday life today because its capacity has
continuously increased and cost has continuously decreased over decades. This positive …

How Much Can Data Compressibility Help to Improve {NAND} Flash Memory Lifetime?

J Li, K Zhao, X Zhang, J Ma, M Zhao… - 13th USENIX Conference …, 2015 - usenix.org
Although data compression can benefit flash memory lifetime, little work has been done to
rigorously study the full potential of exploiting data compressibility to improve memory …

MegIS: High-Performance, Energy-Efficient, and Low-Cost Metagenomic Analysis with In-Storage Processing

NM Ghiasi, M Sadrosadati, H Mustafa… - 2024 ACM/IEEE 51st …, 2024 - ieeexplore.ieee.org
Metagenomics, the study of the genome sequences of diverse organisms in a common
environment, has led to significant advances in many fields. Since the species present in a …

Deep learning-aided dynamic read thresholds design for multi-level-cell flash memories

Z Mei, K Cai, X He - IEEE Transactions on Communications, 2020 - ieeexplore.ieee.org
The practical NAND flash memory suffers from various non-stationary noises that are difficult
to be predicted. For example, the data retention noise induced channel offset is unknown …