Simulation of bipolar-type resistive switching devices using a recursive approach to the dynamic memdiode model
Very often researchers in the field of resistive switching devices or memristors need to model
their experimental data using a compact representation without dealing with the …
their experimental data using a compact representation without dealing with the …
[HTML][HTML] On the asymmetry of resistive switching transitions
In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal
stacks is investigated, mainly focusing on the analysis of set and reset transitions. The …
stacks is investigated, mainly focusing on the analysis of set and reset transitions. The …
Reset transition in HfO2-Based memristors using a constant power signal
Memristors, also known as resistive switching devices, have great potential for applications
in memory and neuromorphic systems. Understanding the switching mechanisms is crucial …
in memory and neuromorphic systems. Understanding the switching mechanisms is crucial …
[HTML][HTML] A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
The switching dynamics of TiN/Ti/HfO 2/W-based resistive memories is investigated. The
analysis consisted in the systematic application of voltage sweeps with different ramp rates …
analysis consisted in the systematic application of voltage sweeps with different ramp rates …
Dynamics of set and reset processes in HfO2-based bipolar resistive switching devices
The temporal evolution of the set and reset processes in TiN/Ti/HfO 2/W metal-insulator-
metal devices exhibiting resistive switching behavior is investigated in depth. To this end …
metal devices exhibiting resistive switching behavior is investigated in depth. To this end …
The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices
Tuning the conductance of a memristive device is a process that requires energy and
involves power dissipation. In this letter, the role the memory state programming strategy …
involves power dissipation. In this letter, the role the memory state programming strategy …
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
D Maldonado Correa, S Aldana Delgado… - 2023 - digibug.ugr.es
The switching dynamics of TiN/Ti/HfO2/W-based resistive memories is investigated. The
analysis consisted in the systematic application of voltage sweeps with different ramp rates …
analysis consisted in the systematic application of voltage sweeps with different ramp rates …