Despite significant technological advances in miniaturization and operational speed,
modern electronic devices suffer from unescapably increasing rates of Joule heating and …

The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …

Electric fields at interfaces exhibit useful phenomena, such as switching functions in
transistors, through electron accumulations and/or electric dipole inductions. We find one …

Development of energy-efficient on-demand magnonic nanochannels (MNCs) can
revolutionize on-chip data communication and processing. We have developed a dynamic …

Traditional electronic technologies face many challenges, such as the scalability of
equipment and improvement of performance. Some novel spintronic objects are expected to …

Electric-field-induced control of magnetic properties at room temperature has attracted
considerable attention owing to its significant potential for facilitating the construction of …

We have investigated the voltage-controlled magnetic anisotropy (VCMA) effect in Co/MgO
junctions by inserting a sub-atomic layer of heavy metals at the interface. We evaluated an …

The interfacial Dzyaloshinskii–Moriya interaction (iDMI) in asymmetric magnetic multilayer
films has displayed increasingly important roles in the modification of domain walls …

The need for increasingly powerful computing hardware has spawned many ideas
stipulating, primarily, the replacement of traditional transistors with alternate'switches' that …

To improve power efficiency and endurance of magnetic memory technologies, a voltage-
controlled mechanism is desirable. The voltage control of magnetic anisotropy (VCMA) effect …