Gallium nitride is a wide bandgap semiconductor material with high electric field strength
and electron mobility that translate in a tremendous potential for radio-frequency …

The technological development of GaN high electron mobility transistor (HEMT) is on the
right track to compete with Si and SiC-based power transistors for the market segment of> …

The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …

Joule self-heating is the main obstacle limiting the performance of GaN power devices. A
nano-diamond (NCD) film for near-junction heat transfer has been approved as an effective …

Ag sinter pastes comprising Ag nano/microparticles in an organic binder exhibit many
advantages for electronic packaging, such as a low sintering temperature (< 300° C), high …

The integration of diamond and GaN has been highly pursued for thermal management
purposes as well as combining their exceptional complementary properties for power …

The ultrawide-bandgap (UWBG)(~ 4.8 eV) semiconductor-gallium oxide (-Ga 2 O 3) gives
promise to the next generation of high-power electrical devices owing to its high-power …

With the increase in penetration of power electronic converters in the power systems, a
demand for overcurrent/overloading capability has risen for the fault clearance duration. This …

Wide bandgap power electronics have been commercialized for many applications. Gallium
nitride (GaN) high electron mobility transistor (HEMT) has superior performance in high …

Abstract Machine learning (ML) has gained extensive attention in recent years due to its
powerful data analysis capabilities. It has been successfully applied to many fields and …