Pressure‐induced structural phase transitions in materials and earth sciences

FJ Manjón, D Errandonea - physica status solidi (b), 2009 - Wiley Online Library
Pressure is an important thermodynamic parameter since it allows an increase of matter
density by reducing volume. The reduction of volume by applying high pressures leads to an …

First-principles study of phase transition, electronic, elastic and optical properties of defect chalcopyrite ZnGa2Te4 semiconductor under different pressures

R Mayengbam, SK Tripathy, G Palai, SS Dhar - Journal of Physics and …, 2018 - Elsevier
The generalized gradient approximation (GGA) within the framework of density functional
theory (DFT) has been used to investigate the phase transition, electronic, elastic and optical …

High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4

D Errandonea, RS Kumar, FJ Manjón… - Journal of applied …, 2008 - pubs.aip.org
X-ray diffraction measurements on the sphalerite-derivatives ZnGa 2 Se 4 and CdGa 2 S 4
have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa 2 Se 4 …

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

O Gomis, R Vilaplana, FJ Manjón… - Journal of applied …, 2012 - pubs.aip.org
High-pressure optical absorption and Raman scattering measurements have been
performed in defect chalcopyrite (DC) CdGa 2 Se 4 up to 22 GPa during two pressure cycles …

[HTML][HTML] Optical absorption of defect chalcopyrite and defect stannite ZnGa2Se4 under high pressure

O Gomis, R Vilaplana, E Pérez-González… - Journal of Alloys and …, 2023 - Elsevier
Optical absorption measurements at high pressure have been performed in two phases of
the ordered-vacancy compound (OVC) ZnGa 2 Se 4: defect stannite (DS) and defect …

Structural, elastic, electronic, and optical properties of defect-chalcopyrite structure CdGa2 X 4 (X = S, Se) compounds

SH Ma, ZY Jiao, XZ Zhang - Journal of Materials Science, 2012 - Springer
First-principles calculations were performed to investigate the elastic, electronic, and optical
properties of defect-chalcopyrite (DC) structure CdGa 2 X 4 (X= S, Se) compounds. The …

Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure

O Gomis, D Santamaria-Perez, R Vilaplana… - Journal of alloys and …, 2014 - Elsevier
In this work, we focus on the study of the structural and elastic properties of mercury
digallium sulfide (HgGa 2 S 4) at high pressures. This compound belongs to the family of AB …

Structural and optical investigations of ZnGa2X4 (X= S, Se) compounds for solar photovoltaic applications

J Sahariya, P Kumar, A Soni - Materials Chemistry and Physics, 2017 - Elsevier
In this paper, we have performed electronic and optical investigations for ternary bulk
chalcopyrite's ZnGa 2 X 4 (X= S, Se) to explore their utility as solar cell materials. The …

[HTML][HTML] Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4

A Liang, LT Shi, S Gallego-Parra, O Gomis… - Journal of Alloys and …, 2021 - Elsevier
This paper reports a joint experimental and theoretical study of the electronic band structure
of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa 2 S 4 and …

[HTML][HTML] Pressure-induced structural transition in chalcopyrite ZnSiP2

VS Bhadram, L Krishna, ES Toberer, R Hrubiak… - Applied Physics …, 2017 - pubs.aip.org
The pressure-dependent phase behavior of semiconducting chalcopyrite ZnSiP 2 was
studied up to 30 GPa using in situ X-ray diffraction and Raman spectroscopy in a diamond …