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[PDF][PDF] 拉曼光谱技术在肿瘤诊断上的应用研究进展
祁亚峰， 刘宇宏， 刘大猛 - Laser & Optoelectronics Progress, 2020 - researching.cn
摘要肿瘤是一种严重威胁我国居民生命健康的重大疾病. 现有的肿瘤诊断方式存在诊断时间长,
创伤严重和误判率高等问题, 且严重依赖于医生的主观经验. 因此, 研究出具有智能属性的肿瘤 …
创伤严重和误判率高等问题, 且严重依赖于医生的主观经验. 因此, 研究出具有智能属性的肿瘤 …
Tailoring Surface and Electrical Properties of Ni/4H‐nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation
V Kumar, AS Maan, J Akhtar - physica status solidi (a), 2018 - Wiley Online Library
In this experiment, the atomic scale surface and electrical properties of Ni/4H‐nSiC Schottky
barrier diode (SBD) are selectively modified (using a shadow mask with openings in active …
barrier diode (SBD) are selectively modified (using a shadow mask with openings in active …
Impact of mechanical stress and nitrogen do** on the defect distribution in the initial stage of the 4H-SiC PVT growth process
J Steiner, PJ Wellmann - Materials, 2022 - mdpi.com
Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress
during physical vapor transport (PVT). The impact of the nitrogen-do** concentration …
during physical vapor transport (PVT). The impact of the nitrogen-do** concentration …
[HTML][HTML] Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy
We demonstrate a non-destructive approach to understanding the growth modes of a GaN
thin film and simultaneously quantify its residual strains and their effect on optical and …
thin film and simultaneously quantify its residual strains and their effect on optical and …
[PDF][PDF] Impact of Mechanical Stress and Nitrogen Do** on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process. Materials 2022, 15, 1897
J Steiner, PJ Wellmann - 2022 - researchgate.net
Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress
during physical vapor transport (PVT). The impact of the nitrogen-do** concentration …
during physical vapor transport (PVT). The impact of the nitrogen-do** concentration …