Photovoltaic generation has stepped up within the last decade from outsider status to one of
the important contributors of the ongoing energy transition, with about 1.7% of world …

We review epitaxial formation, basic properties, and device applications of a novel type of
nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots …

High‐efficiency solar cells are essential for high‐density terrestrial applications, as well as
space and potentially vehicle applications. The optimum bandgap for the terrestrial spectrum …

Quantum well solar cells, as a promising approach for next-generation photovoltaic
technology, have received great attention in the last few years. Recent developments in …

III-V materials enable the highest reported power conversion efficiency of any photovoltaic
technology. The incorporation of high-quality nanostructures can tailor absorption to the …

Quantum-well tandem solar cells have been shown to achieve higher efficiencies due to a
more matched bandgap combination. But beyond 100-period quantum wells, the stress …

A quantum wire‐on‐well (WoW) structure, taking advantage of the layer undulation of an
InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to …

InGaAs/GaAsP superlattice (SL) is a promising narrow-gap material for III–V multi-junction
solar cells on Ge. In metal-organic vapor phase epitaxy (MOVPE) of SL on vicinal substrates …

Resistance-less dark IV-curves of GaAs solar cells with and without quantum-dimensional
objects allied to both quantum dot and quantum well have been obtained and analyzed …

We have successfully grown, through the detailed control of the growth kinetics, flat InAlAs
metamorphic buffer layers on 2∘-off GaAs (111) A substrates using molecular beam epitaxy …