III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …

Designing strategies to reach monodispersity in fabrication of semiconductor nanowire
ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire …

Nanowire (NW) crystal growth via the vapour–liquid–solid mechanism is a complex dynamic
process involving interactions between many atoms of various thermodynamic states. With …

Semiconductor nanowires offer the opportunity to incorporate novel structures and
functionality into electronic and optoelectronic devices. A clear understanding of the …

Achieving quantum confinement by bottom-up growth of nanowires has so far been limited
to the ability of obtaining stable metal droplets of radii around 10 nm or less. This is within …

III-V semiconductor nanowires deterministically placed on top of silicon electronic platform
would open many avenues in silicon-based photonics, quantum technologies and energy …

The bottom-up fabrication of regular nanowire (NW) arrays on a masked substrate is
technologically relevant, but the growth dynamic is rather complex due to the superposition …