The extraordinary electronic, optical, and mechanical characteristics of 2D materials make
them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to …

The emergence of silicon photonics over the past two decades has established silicon as a
preferred substrate platform for photonic integration. While most silicon-based photonic …

Photodetection technology has been systematically studied due to wide practical
applications in temperature monitoring, thermal image technology, and light communication …

Monolayer 2H-phase MoS2-based photodetectors exhibit high photon absorption but suffer
from low photoresponse, which severely limits their applications in optoelectronic fields. The …

Metal halide perovskite materials, which combine outstanding physical properties, large
absorption coefficient, tailored composition, and low-cost solution-processing, have aroused …

Although Si is extensively used in micro-nano electronics, its inherent optical absorption
cutoff at 1100-nm limits its photonic and optoelectronic applications in visible to partly near …

Silicon has been widely used in the microelectronics industry. However, its photonic
applications are restricted to visible and partial near-infrared spectral range owing to its …

Light-material interaction has received significant attention for wearable electronics because
of its exceptional ability to excite multi-physical, transient, and non-equilibrium photon …

We present the synthesis of a unique vertically aligned ZnO-TiO2 core–shell nanowires
(NWs) heterostructure on an Si-wafer using a chemical vapor deposition method. The …

Hyperdo** silicon, which introduces deep-level dopants into Si at concentrations near one
atomic percent, drastically changes its optoelectronic properties. We review recent progress …