Modeling and simulation of GaAsPN/GaP quantum dot structure for solar cell in intermediate band solar cell applications
This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD)
solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance …
solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance …
InAs/InP quantum dots stacking: Impact of spacer layer on optical properties
Y **ong, X Zhang - Journal of Applied Physics, 2019 - pubs.aip.org
The optical properties of a vertical multilayer stack of semiconductor self-assembled
quantum dots (QDs) depend on the coupling status. We present an improved modeling …
quantum dots (QDs) depend on the coupling status. We present an improved modeling …
Electronic and Transport Properties of Covalent Functionalized Monolayer MoS2 by Ferrocene Derivatives
D Li, G Zhang, Y Hu, Y Shang - JOM, 2023 - Springer
We have investigated the electronic and transport properties of a series of 2D Fc (X) n–
MoS2 (Fc= Fe (Cp) 2; X= SiH2, CH2, CH= CH, or C≡ C; n= 1 or 2) systems by using …
MoS2 (Fc= Fe (Cp) 2; X= SiH2, CH2, CH= CH, or C≡ C; n= 1 or 2) systems by using …
Strong sulfur passivation effects on the gas sensitivity of an In0. 3Ga0. 7As surface quantum dots coupling structure
J Wu, Y Yang, Z Liu, G Wang - Journal of Crystal Growth, 2021 - Elsevier
The strong sulfur passivation effects on the gas sensitivity of a coupling structure is
investigated. The coupling structure is consisted of an In 0.3 Ga 0.7 As surface quantum dots …
investigated. The coupling structure is consisted of an In 0.3 Ga 0.7 As surface quantum dots …
Self-assembled InAs/InGaAsP/InP quantum dots: Intraband relaxation impacted by ultrathin GaP sublayer
F Huang, Y **ong, X Zhang - Journal of Applied Physics, 2020 - pubs.aip.org
The influence of an ultrathin GaP (or GaAs) sublayer on the nonradiative intraband
relaxation in InAs/InGaAsP/InP quantum dots (QDs) is investigated. It is found that, based on …
relaxation in InAs/InGaAsP/InP quantum dots (QDs) is investigated. It is found that, based on …
Modeling of Self-Assembled Quantum Dot Lasers
Y **ong - 2019 - spectrum.library.concordia.ca
The study of active region structure for semiconductor lasers began in the 1960s. Most
recently, quantum dot (QD) based lasers have attracted increasing attention. Modeling is …
recently, quantum dot (QD) based lasers have attracted increasing attention. Modeling is …