We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …

The absorption coefficient and refractive index of Ge 1− x Sn x alloys (x from 0% to 10%)
were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic …

Group IV photonics is on its way to be integrated with electronic circuits, making information
transfer and processing faster and more energy efficient. Light sources, a critical component …

Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …

We present results on CVD growth and electro-optical characterization of Ge_0. 92Sn_0.
08/Ge pin heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn …

GeSn (Sn content up to 4.2%) photodiodes with vertical pin structures were grown on thin
Ge virtual substrates on Si by a low temperature (160° C) molecular beam epitaxy. Vertical …

Double heterostructure Ge/Ge 1-x Sn x/Ge light-emitting diodes (LEDs) with 6% and 8% Sn
were grown on Si substrates using chemical vapor deposition. The electroluminescence …

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic
integration with other optical components of the photonic circuits because of the planar …

Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …