The origin of shape, orientation, and structure of Spontaneously formed Wurtzite GaN nanorods on cubic Si (001) Surface
We elucidate the atomistic level details of the formation of 1-D GaN nanostructures on Si
(001) by molecular beam epitaxy. In a multitechnique study, we understand the epitaxy and …
(001) by molecular beam epitaxy. In a multitechnique study, we understand the epitaxy and …
Catalyst free self-assembled growth of InN nanorings on stepped Si (5 5 3) surface
A novel technique for synthesis of high crystalline quality self-assembled InN nanorings, by
nitriding the bulk deposited In/Si (5 5 3)-1× 4 system using low energy N 2+ ions at 520° C …
nitriding the bulk deposited In/Si (5 5 3)-1× 4 system using low energy N 2+ ions at 520° C …
Kinetically controlled growth of InN thin films by MBE and their structural, optical and electronic properties
M Tangi - 2014 - libjncir.jncasr.ac.in
The excitement brought by the science and technology of III-V compound semiconductors is
well described in several books1 {4 and review articles5 {8, published. As shown in Fig 1.1 …
well described in several books1 {4 and review articles5 {8, published. As shown in Fig 1.1 …
Lowering of growth temperature of epitaxial In N by superlattice matched intermediate layers
M Tangi, A De, SM Shivaprasad - physica status solidi (a), 2013 - Wiley Online Library
We are able to grow high quality InN films on indium metal induced 1× 1 and 7× 7
superstructural phases of Si (111) at lower growth temperatures than those previously …
superstructural phases of Si (111) at lower growth temperatures than those previously …