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A review of switching slew rate control for silicon carbide devices using active gate drivers
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
Aging mechanisms and accelerated lifetime tests for SiC MOSFETs: An overview
Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …
MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This …
A review of voltage/current sharing techniques for series–parallel-connected modular power conversion systems
Recently, more occasions with high input voltage and/or high output voltage applications are
emerging. However, the existing switching devices are limited by the voltage stress, eg, the …
emerging. However, the existing switching devices are limited by the voltage stress, eg, the …
Active gate driver for dynamic current balancing of parallel-connected SiC MOSFETs
In high-power applications, parallel connection of discrete silicon carbide (SiC) mosfets is
necessary to increase the current rating. However, the unbalanced dynamic current during …
necessary to increase the current rating. However, the unbalanced dynamic current during …
Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke
Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …
capacity power converters. However, transient imbalance current, during turn-on and-off …
Balancing of peak currents between paralleled SiC MOSFETs by drive-source resistors and coupled power-source inductors
The peak currents between two paralleled SiC MOSFETs could differ significantly due to the
mismatch in threshold voltages V th. The method described herein employs passive …
mismatch in threshold voltages V th. The method described herein employs passive …
Layout-dominated dynamic current imbalance in multichip power module: Mechanism modeling and comparative evaluation
The multichip power module is an irreplaceable component for high-capacity industrial
converters. Dynamic current imbalance among parallel chips challenges the electrothermal …
converters. Dynamic current imbalance among parallel chips challenges the electrothermal …
Single-pulse avalanche mode robustness of commercial 1200 V/80 mΩ SiC MOSFETs
Commercialization of 1200-V silicon carbide (SiC) MOSFET has enabled power electronic
design with improved efficiency as well as increased power density. High-voltage spikes …
design with improved efficiency as well as increased power density. High-voltage spikes …
Design and evaluation of laminated busbar for three-level T-type NPC power electronics building block with enhanced dynamic current sharing
This article focuses on providing the laminated busbar design guidance for a three-level T-
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …
A Novel Non-Intrusive Technique for BTI Characterization in SiC mosfets
Threshold voltage (VTH) shift due to bias temperature instability (BTI) is a well-known
problem in SiC mosfets that occurs due to oxide traps in the SiC/SiO2 gate interface. The …
problem in SiC mosfets that occurs due to oxide traps in the SiC/SiO2 gate interface. The …