The main target of this article is to propose for the first time a physics-based continuous and
symmetric compact model that accurately captures I–V experimental dependencies induced …

The optimization of graphene field-effect transistors (GFETs) for high-frequency applications
requires further understanding of the physical mechanisms concerning charge carrier …

In this work, the Landauer approach-based short channel model of a graphene field effect
transistor has been presented. The quasi-ballistic and ballistic transport mechanism is …

Two‐dimensional material‐based field‐effect transistors (2DM‐FETs) are playing a
revolutionary role in electronic devices. However, before electronic design automation …

In the past few years, liquid-gated graphene field-effect transistors (LG-GFETs) have been
widely used in biological detection due to their unique advantages. An accurate transistor …

A field-dependent compact model of the backscattering coefficient and quasi-ballistic
mobility of charge carriers in graphene has been developed for two different substrates …

Graphene field-effect transistors (GFETs) based on ballistic transport represent an emerging
nanoelectronics device technology with promise to add a new dimension to electronics and …

Graphene has ultra-high carrier mobility (77,000 cm2V− s− 1) and saturation velocity, which
makes it compatible with high-speed circuit applications. This chapter provides a detailed …

During the last decades, significant efforts have been made to exploit the excellent and
promising electronic properties exhibited by field-effect transistors (FETs) with two …

A simple, compact, and fundamental physics-based quasi-analytical model for single-layer
graphene field effect transistors (GFETs) with large-area graphene is presented using a …