The basics of dopant-free materials used as carrier-selective layers at the surfaces and
interfaces in c-Si or poly-Si solar cells have been reviewed. Emphasis has been given to the …

A possible research path to increase the photo-generated current in silicon heterojunction
(SHJ) solar cells is to replace doped layers on the front-side of the cell, which result in …

We present the feasibility of integrating substoichiometric molybdenum oxide (MoOx) as
hole‐selective rear contact into the production sequence of industrial scale p‐type …

Transition metal oxides (TMOs) with high work function (V 2 O 5, MoO 3, WO 3) are very
promising hole selective materials for high-efficiency crystalline silicon solar cells, as they …

The temperature coefficient (TC) is an essential figure of merit to accurately evaluate solar
cell performance at various operating temperatures and hence enabling the comparison …

The tungsten oxide (WO x) thin films have been deposited by a novel hot filament oxidation-
sublimation process and applied in the dopant-free heterojunction solar cells as the hole …

We present large-area “moly-poly” cells, with a front side MoOx/a-Si: H (i) passivating
contact and a rear-side poly-Si/SiOx stack, and we have demonstrated that MoOx based c-Si …

High efficiency silicon solar cells generally feature heterojunction or carrier-selective contact
architectures, for which there is current interest in develo** structures using a wide range …

NiO x is a p-type semiconductor material with wide band-gap (3.6∼ 4.0 eV), good thermal
and chemical stability. In terms of energy band structure, NiO x/n-Si possesses low valence …

Metal oxides are versatile materials that have various applications in silicon photovoltaics.
The first focus of this thesis is to develop a safer process for thermal atomic layer deposition …