Progress of structural and electronic properties of diamond: a mini review

H Yang, Y Ma, Y Dai - Functional Diamond, 2022 - Taylor & Francis
Diamond is of great importance for scientific and practical applications. It is the hardest
natural material and holds potential applications in mechanics, electronics and photonics …

Divulging the potential role of wide band gap semiconductors in electro and photo catalytic water splitting for green hydrogen production

A Krishnan, K Archana, AS Arsha, A Viswam… - Chinese Journal of …, 2025 - Elsevier
Green hydrogen is the most promising option and a two in one remedy that resolve the
problem of both energy crisis and environmental pollution. Wide band gap semiconductors …

Significantly Enhanced Interfacial Thermal Conductance across GaN/Diamond Interfaces Utilizing AlxGa1–xN as a Phonon Bridge

K Wu, G Chang, J Ye, G Zhang - ACS Applied Materials & …, 2024 - ACS Publications
Improving the thermal conductance at the GaN/diamond interface is crucial for boosting GaN-
based device performance and reliability. In this study, first-principles calculations and …

Properties, mechanism and applications of diamond as an antibacterial material

A Cumont, AR Pitt, PA Lambert, MR Oggioni… - Functional …, 2022 - Taylor & Francis
Antibiotic resistance in bacteria is a current threat causing an increasing number of
infections of difficult clinical management. While the overuse and misuse of antibiotics are …

A comparative study of interfacial thermal conductance between metal and semiconductor

K Wu, L Zhang, D Wang, F Li, P Zhang, L Sang… - Scientific Reports, 2022 - nature.com
To understand and control thermal conductance of interface between metal and
semiconductor has now become a crucial task for the thermal design and management of …

Structural design and electronic performance at MOx/diamond (M= Hf, Zr, Ti, Al, Sc, Y) interfaces for MOS device applications

C Cheng, R Li, Q Gui, G Wu, K Liang, F Dong… - Applied Surface …, 2025 - Elsevier
The ultra-wide bandgap semiconductor diamond represents a promising potential for
advancement and innovation in the field of electronic device development. Utilizing first …

Atomic layer deposition of high-κ layers on polycrystalline diamond for MOS devices: a review

A Jaggernauth, JC Mendes, RF Silva - Journal of Materials Chemistry …, 2020 - pubs.rsc.org
Changes in the expected performance of electronic devices have heavily influenced
investigation into Si-substitute materials having the ability to meet these demands. Two …

The heterointerface characterization of BaF2 or MgF2 on the hydrogenated diamond by X-ray photoelectron spectroscopy

K Su, Q He, J Zhang, Z Ren, J Chen, J Li… - Materials Science in …, 2024 - Elsevier
Group-II fluorides (BaF 2 and MgF 2) insulators are deposited on hydrogenated (C–H)
diamonds by E-beam evaporator at room temperature. The bandgaps, chemical bonds and …

[HTML][HTML] The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2

C Sun, T Hao, J Li, H Ye, C Gu - Micro and Nano Engineering, 2020 - Elsevier
The hydrogen plasma treatment of single crystal diamond was carried out by microwave
plasma chemical vapor deposition equipment, and the normally-off hydrogen-terminated …

Two-dimensional hole gas formed at diamond surface by Al2O3/diamond interface engineering

K Wu, Y Zhang, J Ma, Z Fu, C Chen - Diamond and Related Materials, 2020 - Elsevier
Understanding and rationally controlling the interfacial electronic states of the Al 2 O
3/diamond (Al 2 O 3 (001)/C (001)) appears to be crucial in the next generation oxide …