Research on the reliability of advanced packaging under multi-field coupling: a review

Y Wang, H Liu, L Huo, H Li, W Tian, H Ji, S Chen - Micromachines, 2024 - mdpi.com
With the advancement of Moore's Law reaching its limits, advanced packaging technologies
represented by Flip Chip (FC), Wafer-Level Packaging (WLP), System in Package (SiP), and …

[HTML][HTML] Recent progress in physics-based modeling of electromigration in integrated circuit interconnects

WS Zhao, R Zhang, DW Wang - Micromachines, 2022 - mdpi.com
The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …

Grain boundaries-dominated migration failure of copper interconnect under multiphysics field: Insight from theoretical modeling and finite element analysis

Y Zhu, H Bao, Z Yang, H Jiang, F Ma - Microelectronics Reliability, 2024 - Elsevier
As the feature size of Cu interconnects in microelectronic devices are miniaturized into micro-
and even nano-scale, the effects of grain boundaries (GBs) on the electromigration (EM) …

[HTML][HTML] Microstructure and properties of electromigration of Sn58Bi/Cu solder joints with different joule thermal properties

Y Gao, K Zhang, C Zhang, Y Wang, W Chen - Metals, 2023 - mdpi.com
Electromigration is one of the most important research issues affecting the reliability of
solder joints. Current-induced Joule heating affects the electromigration behavior of solder …

A novel semi-analytical approach for fast electromigration stress analysis in multi-segment interconnects

O Axelou, N Evmorfopoulos, G Floros… - Proceedings of the 41st …, 2022 - dl.acm.org
As integrated circuit technologies move below 10 nm, Electromigration (EM) has become an
issue of great concern for the longterm reliability due to the stricter performance, thermal and …

Multilayer perceptron-based stress evolution analysis under dc current stressing for multisegment wires

T Hou, P Zhen, N Wong, Q Chen, G Shi… - … on Computer-Aided …, 2022 - ieeexplore.ieee.org
Electromigration (EM) is one of the major concerns in the reliability analysis of very large-
scale integration (VLSI) systems due to the continuous technology scaling. Accurately …

Fast electromigration stress analysis considering spatial joule heating effects

M Kavousi, L Chen, SXD Tan - 2022 27th Asia and South …, 2022 - ieeexplore.ieee.org
Temperature gradient due to Joule heating has huge impacts on the electromigration (EM)
induced failure effects. However, Joule heating and related thermomigration (TM) effects …

A deep learning framework for solving stress-based partial differential equations in electromigration analysis

T Hou, P Zhen, Z Ji, HB Chen - ACM Transactions on Design Automation …, 2023 - dl.acm.org
The electromigration-induced reliability issues (EM) in very large scale integration (VLSI)
circuits have attracted continuous attention due to technology scaling. Traditional EM …

Recent progress in the analysis of electromigration and stress migration in large multisegment interconnects

N Evmorfopoulos, MAA Shohel, O Axelou… - Proceedings of the …, 2023 - dl.acm.org
Traditional approaches to analyzing electromigration (EM) in on-chip interconnects are
largely driven by semi-empirical models. However, such methods are inexact for the typical …

Fast electromigration stress analysis using low-rank balanced truncation for general interconnect and power grid structures

O Axelou, G Floros, N Evmorfopoulos, G Stamoulis - Integration, 2023 - Elsevier
Electromigration (EM) has become one of the most significant challenges considering
longterm reliability in integrated circuit design. The problem is caused by the large current …