Application of semiconductors as electric and optoelectronic devices depends critically on
their dopability. Failure to dope a material, ie, to produce enough free charge carriers …

This paper reviews the recent developments in first-principles total energy studies of the
phenomenological equilibrium'do** limit rule'that governs the maximum electrical …

Abstract III–N–V semiconductors are promising materials for use in next-generation
multijunction solar cells because these materials can be lattice matched to substrates such …

Thermodynamic calculation suggests that the formation of bulk GaN pins N chemical
potential μ N≤ μ N max, resulting in low equilibrium N solubility [N] in bulk GaAs: N. In …

We present first-principles calculations of the thermodynamic and structural properties of
cubic In x Ga 1− x N and Al x Ga 1− x N alloys. They are based on the generalized …

The lattice dynamics of random A x B 1− x N alloys (A, B= A l, G a, In) is studied with a
method based on the modified random-element isodisplacement (MREI) and a rigid-ion …

The semiconductors formed from group 13 metals and from group 15 anions, referred to as
the III-V semiconductors, have found use in a broad range of technologies. Their versatility …

Transparent conductive materials (TCMs) has always been playing a significant role in
electronic and photovoltaic area, due to its prominent optical and electronic properties. To …

We review the recent developments in GaAs-based 1.55-mum lasers grown by molecular
beam epitaxy (MBE). While materials growth is challenging, the growth window appears to …

We report on the incorporation of In during growth of In x Ga 1− x N by molecular beam
epitaxy under varying In/Ga flux ratios and with different film thicknesses. The incorporation …