Hydrogen-enhanced carrier collection enabling wide-bandgap Cd-free Cu2ZnSnS4 solar cells with 11.4% certified efficiency

A Wang, J Cong, S Zhou, J Huang, J Cao, X Cui… - Nature Energy, 2025‏ - nature.com
Abstract Wide-bandgap kesterite Cu2ZnSnS4 offers an economically viable, sustainably
sourced and environmentally friendly material for both single-junction and tandem …

Metastable Defect Formation at Microvoids Identified as a Source of Light-Induced Degradation in

M Fehr, A Schnegg, B Rech, O Astakhov, F Finger… - Physical review …, 2014‏ - APS
Light-induced degradation of hydrogenated amorphous silicon (a-Si: H), known as the
Staebler-Wronski effect, has been studied by time-domain pulsed electron-paramagnetic …

Photoconductivity methods in materials research

M Brinza, J Willekens, ML Benkhedir… - Journal of Materials …, 2005‏ - Springer
Photoconductivity refers to the incremental change upon illumination of the electrical
conductivity of a substance. For semiconductors and insulators, where the conductivity in the …

The influence of a temperature dependent bandgap on the energy scale of modulated photocurrent experiments

J Luckas, S Kremers, D Krebs, M Salinga… - Journal of Applied …, 2011‏ - pubs.aip.org
Amorphous semiconductors and chalcogenide glasses exhibit a high density of localized
states in their bandgap as a consequence of structural defects or due to a lack of long range …

Irreversible light-induced degradation and stabilization of hydrogenated polymorphous silicon solar cells

KH Kim, EV Johnson, PR i Cabarrocas - Solar Energy Materials and Solar …, 2012‏ - Elsevier
In this work, hydrogenated amorphous and polymorphous silicon (a-Si: H and pm-Si: H)
solar cells were tested for the reversibility of their light-induced degradation by subjecting …

Structural and electrical properties of metastable defects in hydrogenated amorphous silicon

J Melskens, A Schnegg, A Baldansuren, K Lips… - Physical Review B, 2015‏ - APS
The structural and electrical properties of metastable defects in various types of
hydrogenated amorphous silicon have been studied using a powerful combination of …

Photoconductivity in materials research

S Reynolds, M Brinza, ML Benkhedir… - Springer Handbook of …, 2017‏ - Springer
Photoconductivity is the incremental change in the electrical conductivity of a semiconductor
or insulator upon illumination. The behavior of photoconductivity with photon energy, light …

Migration of open volume deficiencies in hydrogenated amorphous silicon during annealing

J Melskens, SWH Eijt, M Schouten… - IEEE Journal of …, 2017‏ - ieeexplore.ieee.org
The nanostructure of hydrogenated amorphous silicon (a-Si: H) is studied by means of
doppler broadening positron annihilation spectroscopy (DB-PAS) and Fourier transform …

Determination of hydrogenated amorphous silicon electronic transport parameters and density of states using several photoconductivity techniques

C Longeaud, F Ventosinos, JA Schmidt - Journal of Applied Physics, 2012‏ - pubs.aip.org
In this paper, we show that the combination of different characterization techniques based
on the photoconductivity of hydrogenated amorphous silicon can be a tool to investigate on …

Interdefect correlation during thermal recovery of in semi-insulating GaAs: Proposal of a three-center-complex model

A Fukuyama, T Ikari, Y Akashi, M Suemitsu - Physical Review B, 2003‏ - APS
Time evolution of EL 2 thermal recovery has been investigated in detail by a piezoelectric
photothermal method. Results showed a simple saturating behavior for T> 120 K and a …