Roadmap of spin–orbit torques

Q Shao, P Li, L Liu, H Yang, S Fukami… - IEEE transactions on …, 2021 - ieeexplore.ieee.org
Spin–orbit torque (SOT) is an emerging technology that enables the efficient manipulation of
spintronic devices. The initial processes of interest in SOTs involved electric fields, spin …

Spintronics for energy-efficient computing: An overview and outlook

Z Guo, J Yin, Y Bai, D Zhu, K Shi, G Wang… - Proceedings of the …, 2021 - ieeexplore.ieee.org
From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

Cascadable in-memory computing based on symmetric writing and readout

L Wang, J **ong, B Cheng, Y Dai, F Wang, C Pan… - Science …, 2022 - science.org
The building block of in-memory computing with spintronic devices is mainly based on the
magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting …

Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques

W Cai, K Shi, Y Zhuo, D Zhu, Y Huang… - IEEE Electron …, 2021 - ieeexplore.ieee.org
The interplay of spin-transfer torque (STT) and spin-orbit torque (SOT) highlights the
potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow …

Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities

J Igarashi, B **nai, K Watanabe, T Shinoda… - npj Spintronics, 2024 - nature.com
Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements
is critical for future electronics with spin-transfer torque magnetoresistive random access …

Spin-orbit torque switching of magnetic tunnel junctions for memory applications

V Krizakova, M Perumkunnil, S Couet… - Journal of Magnetism …, 2022 - Elsevier
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse
classes of materials and devices using electric currents, leading to novel spintronic memory …

[HTML][HTML] Perspectives on field-free spin–orbit torque devices for memory and computing applications

V Lopez-Dominguez, Y Shao… - Journal of Applied …, 2023 - pubs.aip.org
The emergence of embedded magnetic random-access memory (MRAM) and its integration
in mainstream semiconductor manufacturing technology have created an unprecedented …

Quantitative evaluation of hardware binary stochastic neurons

O Hassan, S Datta, KY Camsari - Physical Review Applied, 2021 - APS
Recently, there has been increasing activity to build dedicated Ising machines to accelerate
the solution of combinatorial optimization problems by expressing these problems as a …

Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque

A Meo, J Chureemart, RW Chantrell, P Chureemart - Scientific reports, 2022 - nature.com
We present a theoretical investigation of the magnetisation reversal process in CoFeB-
based magnetic tunnel junctions (MTJs). We perform atomistic spin simulations of …

Recent progress in spin-orbit torque magnetic random-access memory

VD Nguyen, S Rao, K Wostyn, S Couet - npj Spintronics, 2024 - nature.com
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast
operation and high endurance but faces challenges such as low switching current, reliable …