Carrier escape processes from self-organized InAs quantum dots QDs embedded in GaAs
are investigated by time-resolved capacitance spectroscopy. Electron emission is found to …

Space-charge spectroscopy was employed to study electronic structure of a stack of four
layers of Ge quantum dots (QD's) coherently embedded in an n-type Si (001) matrix …

We present a study of the hole emission processes in InAs/GaAs quantum dots using
capacitance and admittance spectroscopies. From the conductance map**, the hole …

We present photocurrent, capacitance, and photoluminescence studies of GaAs-based
Schottky barrier structures incorporating InAs self-assembled quantum dots. We show that …

Изложены теоретические основы адмиттансных методов исследования
полупроводников и базирующиеся на них методы диагностики квантово-размерных …

Emission of electrons from localized electron states in InAs/GaAs self-organized quantum
dots (QDs) grown by MOCVD has been studied by a combination of steady-state voltage …

In this work, the carrier dynamics and electronic properties of self-organized semicon-ductor
quantum dots are studied by depletion-layer capacitance transient spectroscopy (or deep …

In this work, the charge carrier dynamics of self-organized semiconductor quantum dots is
investigated by using time-resolved capacitance spectroscopy (deep level transient …

The possibility of controlling the photoluminescence (PL) intensity and its temperature
dependence by means of in-growth and postgrowth technological procedures has been …

We study the electronic states of self-organized InAs quantum dots embedded in a pn
junction by means of capacitance–voltage C–V characteristics. A model based on the self …