In recent years, with the further ministration of the semiconductor device in integrated
circuits, power consumption and data transmission bandwidth have become insurmountable …

In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

Halide perovskites display full solid solubility for Br: I and Cl: Br compositions at equilibrium,
yet initially homogeneous distributions often partition into Br-and I-rich (Cl-and Br-) regions …

Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently,
because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To …

Serving as the electrical to optical converter, the on-chip silicon light source is an
indispensable component of silicon photonic technologies and has long been pursued …

Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic
integration. Ge is an interesting candidate owing to its pseudodirect gap properties and …

Direct-gap photoluminescence has been observed at room temperature in Ge 1− y Sn y
alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV …

Electronic–photonic synergy has become an increasingly clear solution to enhance the
bandwidth and improve the energy efficiency of information systems. Monolithic integration …

Strain engineering has been used to increase the charge carrier mobility of complementary
metal–oxide–semiconductor transistors as well as to boost and tune the performance of …