(57) ABSTRACT A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural
oxidation and containing an oxygen Sur factant layer to form a more uniform MgO layer and …

(57) ABSTRACT A method of making a magnetic random access memory cell includes
forming a magnetic tunneljunction (MTJ) on top of a wafer, depositing oxide on top of the …

It is made possible to provide a magnetic head that generates a sufficient high-frequency
magnetic field for assisting recording operations, and a magnetic recording device that …

(51) Int. Cl(57) ABSTRACT cii 5/706(2006.01) A STT-RAM MTJ is disclosed with a MgO
tunnel barrier HOL 43/08(2006.01) formed by natural oxidation process. A …

(57) ABSTRACT A magnetic memory cell including a piezoelectric material, and methods of
operating the memory cell are provided. The memory cell includes a stack, and the …

US8767346B2 - Magnetic recording head, magnetic head assembly, magnetic recording
apparatus, and magnetic recording method - Google Patents US8767346B2 - Magnetic …

It is made possible to reduce the write magnetic field generated from the main magnetic pole
toward the spin torque oscillator, so as to reduce the variation in the oscillation …

A non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top
of the fixed layer, and a free layer formed on top of the barrier layer, wherein the electrical …

Provided are magnetic memory devices, electronic systems and memory cards including the
same, methods of manufacturing the same, and methods of controlling a magnetization …

A magnetic device includes a first magnetic layer having at least one magnetic material
layer, a second magnetic layer having at least one magnetic material layer, a first nonmag …