An analytical model of nanogap embedded Gallium Nitride Gate-Material and Dielectric
Engineered-Schottky Nano-Wire Field Effect Transistor (GaN-GME-DE-SNW-FET) for …

In this paper dual metal Schottky barrier asymmetric gate stack cylindrical gate all around
(DM-SB-ASMGS-CGAA) MOSFET is analyzed for improvement in analog performance for …

In this work, we present a comprehensive analytical model for the Spacer-Engineered
Reconfigurable Silicon Nanowire Schottky Barrier Transistor (SE R–Si NW SBT) for …

This paper proposed a Gate-All-Around (GAA) Schottky Barrier (SB)-Gate Stack (GS)-based
Do**less Cylindrical Nanowire Field-Effect Transistor (SB-GS-DNWFET) for the …

A two-dimensional analytical model for the surface potential and threshold voltage of a dual
work function Schottky barrier (SB) MOSFET is presented. The developed model considers …

This paper presents the analytical model of threshold voltage for hetero‐dielectric dual
material gate Schottky barrier (SB) metal oxide semiconductor field effect transistor …

In this paper an analytical surface potential model of a dual material gate (DMG) Schottky
Barrier (SB) metal-oxide-semiconductor field effect transistor (MOSFET) is explored. The …

In this manuscript, a Stack Engineered Junctionless Accumulation Nanowire FET (SE-JAM-
NW FET) has been proposed for low-power and high sensitivity phosphine (PH 3) gas …

The most notable accumulation of trap charges occurs on the oxide/semiconductor interface
of MOS devices and it degrades the device's performance and reliability. In this literature, we …

The gate-all-around (GAA) silicon-on-insulator (SOI) Schottky barrier (SB) nano-wire (NW)
MOSFET was recently proposed for low-power and high-frequency analog and radio …