Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …

The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …

Develo** uncooled photodetectors at midwavelength infrared (MWIR) is critical for various
applications including remote sensing, heat seeking, spectroscopy, and more. In this study …

In this work, we demonstrate an InAs nanowire photodetector at short-wavelength infrared
(SWIR) composed of vertically oriented selective-area InAs nanowire photoabsorber arrays …

As research interest moves from micromaterials to nanomaterials and quantum structures,
the surface energy of the structures has an increasing impact on the nanomaterial growth …

Semiconductor nanowires (NWs), which have nanoscale footprints, enable us to realize
various quantum structures with excellent position and size controllability, utilizing a wide …

Photodetection at short-and mid-wavelength infrared (SWIR and MWIR) enables various
sensing systems used in heat seeking, night vision, and spectroscopy. As a result, uncooled …

Time-resolved photoluminescence (TRPL) has been implemented experimentally to
measure the carrier lifetime of semiconductors for decades. For the characterization of …

In this work, we report on the growth of high yield small bandgap InAs and InAsSb inserts
embedded in InAsP nanowires grown on an InP substrate by catalyst-free selective-area …