Transition metal dichalcogenides have attracted renewed interest for use as thermoelectric
materials owing to their tunable bandgap, moderate Seebeck coefficient, and low thermal …

Proton irradiation-induced effects on AlGaN/GaN high electron mobility transistors (HEMTs)
were studied by emulating a certain space radiation environment (upstream of the earth's …

The performance damage mechanism of InP-based high electron mobility transistors
(HEMTs) after proton irradiation has been investigated comprehensively through induced …

In this paper, proton irradiations on Cascode GaN HEMT power device with an energy of 80
MeV and fluences of 2× 10 11 p/cm 2 and 6× 10 11 p/cm 2 have been carried out, where the …

In this paper, the effect of electron irradiation fluence on direct current (DC) and radio
frequency (RF) of InP-based high electron mobility transistors (HEMTs) was investigated …

The effects of high-energy (1 MeV) electron irradiation on the electrical and trap**
properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated …

In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron
mobility transistors (HEMTs) were investigated after different radiation doses. The changes …

摘要磷化铟(InP) 基高电子迁移率晶体管(High Electron Mobility Transistor, HEMT) 凭借高频,
高增益, 低噪声等特性, 广泛应用于卫星, 载人航天, 深空探测等空间通信系统中 …

In this work, we investigated the time-dependent dielectric breakdown (TDDB)
characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor …

Fabrication of normally-off field effect transistors (FETs) possessed uniform turn-on threshold
voltage (V th) is of special interests. In this work, they were fabricated using dry etching …