Gallium oxide for gas sensor applications: A comprehensive review
Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …
applications owing to its excellent material properties. In this paper, we present a …
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …
related to energy production and transportation. As most energy usage will be electrical (as …
[HTML][HTML] Growth of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka - Journal of Applied Physics, 2022 - pubs.aip.org
The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts
Here we demonstrate a dramatic improvement in Ti/Au ohmic contact performance by
utilizing the anisotropic nature of β-Ga2O3. Under a similar do** concentration, Ti/Au …
utilizing the anisotropic nature of β-Ga2O3. Under a similar do** concentration, Ti/Au …
[HTML][HTML] Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method
Z Galazka, S Ganschow, P Seyidov, K Irmscher… - Applied Physics …, 2022 - pubs.aip.org
Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …
[HTML][HTML] Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga 2 O 3
homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while …
homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while …
Recent advances in self‐powered and flexible UVC photodetectors
Ultraviolet‐C (UVC) radiation is employed in various applications, including irreplaceable
applications in military and civil fields, such as missile guidance, flame detection, partial …
applications in military and civil fields, such as missile guidance, flame detection, partial …
Crystal growth and design of Sn-doped β-Ga2O3: Morphology, defect and property studies of cylindrical crystal by EFG
B Fu, G Jian, W Mu, Y Li, H Wang, Z Jia, Y Li… - Journal of Alloys and …, 2022 - Elsevier
Abstract The cylindrical Sn: β-Ga 2 O 3 crystal with high crystalline quality was successfully
designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped …
designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped …
Ultra-thin lithium aluminate spinel ferrite films with perpendicular magnetic anisotropy and low dam**
Ultra-thin films of low dam** ferromagnetic insulators with perpendicular magnetic
anisotropy have been identified as critical to advancing spin-based electronics by …
anisotropy have been identified as critical to advancing spin-based electronics by …
[HTML][HTML] Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application
This work investigated the metalorganic vapor-phase epitaxy (MOVPE) of (100) β-Ga 2 O 3
films with the aim of meeting the requirements to act as drift layers for high-power electronic …
films with the aim of meeting the requirements to act as drift layers for high-power electronic …