This paper presents a method with an accurate control of threshold voltages (V th) of
AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma …

Wide bandgap semiconductors show promise for high-power microwave electronic devices.
Primarily due to low breakdown voltage, it has not been possible to design and fabricate …

The electron transfer into the two-dimensional electron gas (2DEG) of AlGaN/GaN
heterojunction field-effect transistors (HFETs) is examined theoretically using a charge …

Recent progress in GaN based high electron mobility transistors (HEMTs) has revealed
them to be strong candidates for future high power devices with high frequency operation. In …

Chemical and electrical properties of the surfaces of GaN and GaN/AlGaN heterostructures
were systematically investigated by x-ray photoelectron spectroscopy (XPS), capacitance …

Temperature T dependences of the current–voltage (I–V) characteristics of Ni and Pt/n-GaN
Schottky contacts were measured in detail, and the results were analyzed from various …

Detailed current–voltage–temperature (I–V–T) measurements were performed on the
Schottky diodes fabricated on MOVPE-grown n-GaN layers. A large deviation from the …

A detailed calculation of the free electron concentration and conduction and valence band
edges of AlGaN/GaN heterojunction field-effect transistors is presented. The model is based …

We present a detailed model of the static and dynamic gate leakage current in lateral b-
Ga2O3 MOSFETs with an Al2O3 gate insulator, covering a wide temperature range. We …

The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high
electron mobility transistors is studied using low frequency 1/f noise measurements, with …