The generation, manipulation, storage, and detection of single photons play a central role in
emerging photonic quantum information technology. Individual photons serve as flying …

Self-assembled nanostructures, such as quantum dots (QDs), quantum rings (QRs) and
nanowires (NWs), have been extensively studied because of their physical properties and …

Using plan-view and cross-sectional scanning tunneling microscopy, the shape and
composition of InAs/GaAs quantum dots are investigated before and after cap** by GaAs …

The Sb-induced changes in the optical properties of GaAsSb-capped InAs/GaAs quantum
dots (QDs) are shown to be strongly correlated with structural changes. The observed …

The capability of placing individual nanoscale building blocks on exact substrate locations in
a controlled manner is one of the key requirements to realize future electronic, optical, and …

The influence of a GaAsSb cap** layer on the structural properties of self-assembled
InAs∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning …

We investigated metal-organic vapor phase epitaxy grown (InGa)(AsSb)/GaAs/GaP Stranski–
Krastanov quantum dots (QDs) with potential applications in QD-Flash memories by cross …

Recently, thin AlAs cap** layers (CLs) on InAs quantum dot solar cells (QDSCs) have
been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although …

The practical realization of epitaxial quantum dot (QD) nanocrystals led before long to
impressive experimental advances in optoelectronic devices, as well as to the emergence of …

InAs quantum dots (QDs) are grown on bare InP (001) via droplet epitaxy (DE) in metal–
organic vapor phase epitaxy (MOVPE). Cap** layer engineering, used to control QD size …