Erbium doped materials are of great interest in thin film integrated optoelectronic technology,
due to their Er 3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er …

Three different broadband sensitization concepts for optically active erbium ions are
reviewed: 1) silicon nanocrystals, with absorption over the full visible spectrum, efficiently …

Recombination processes in rare-earth metals in semiconductors are a special case due to
the localized nature of f electrons. Our work explores in detail the radiative and nonradiative …

We have studied the effect of erbium‐impurity interactions on the 1.54 μm luminescence of
Er3+ in crystalline Si. Float‐zone and Czochralski‐grown (100) oriented Si wafers were …

SiO 2 films containing Si nanocrystals (nc-Si) and Er were prepared and their
photoluminescence (PL) properties were studied. The samples exhibited PL peaks at 0.8 …

The presence of silicon nanocrystals in Er doped SiO 2 can enhance the effective Er optical
absorption cross section by several orders of magnitude due to a strong coupling between …

Eu 3+ doped BaMoO 4 powders were prepared by solid state reaction method with various
of Eu 3+ concentrations. The structural and optical behaviors of the prepared samples were …

Publisher Summary This chapter describes the deposition of hydrogenated amorphous
silicon (a-Si: H) and related materials by employing a low-temperature, low-density plasma …

The structural and optical properties of erbium-doped silicon-rich silica samples containing
12 at.% of excess silicon and 0.63 at.% of erbium are studied as a function of annealing …

The composition dependence of room temperature 1.54 μ m Er3+ photoluminescence of
erbium-doped silicon: oxygen thin films produced by electron cyclotron resonance plasma …