Conductive oxide interfaces for field effect devices

L Kornblum - Advanced Materials Interfaces, 2019 - Wiley Online Library
The discovery of 2D conductivity at the interface of insulating oxides uncovered a trove of
rich correlated‐electron physics, whose origins are still being debated 15 years later. In …

Spintronics phenomena of two-dimensional electron gas at oxide interfaces

S Chen, C Ren, S Liang - Advanced Devices & Instrumentation, 2023 - spj.science.org
In addition to magnetism, superconductivity, quantum transport, and ferroelectricity, the
tunable Rashba spin–orbit coupling from spatial inversion symmetry broken of 2 …

Observation of Out-of-Plane Spin Texture in a Two-Dimensional Electron Gas

P He, SMK Walker, SSL Zhang, FY Bruno… - Physical review …, 2018 - APS
We explore the second order bilinear magnetoelectric resistance (BMER) effect in the d-
electron-based two-dimensional electron gas (2 DEG) at the SrTiO 3 (111) surface. We find …

Six-fold crystalline anisotropic magnetoresistance in the (111) oxide interface

PK Rout, I Agireen, E Maniv, M Goldstein, Y Dagan - Physical Review B, 2017 - APS
We measured the magnetoresistance of the 2D electron liquid formed at the (111) LaAlO
3/SrTiO 3 interface. The hexagonal symmetry of the interface is manifested in a six-fold …

Magnetoresistance of two-dimensional and three-dimensional electron gas in LaAlO/SrTiO heterostructures: Influence of magnetic ordering, interface scattering …

X Wang, WM Lü, A Annadi, ZQ Liu, K Gopinadhan… - Physical Review B …, 2011 - APS
Magnetoresistance (MR) anisotropy in LaAlO 3/SrTiO 3 interfaces is compared between
samples prepared in high-oxygen partial-pressure (PO 2) of 10− 4 mbar exhibiting quasi-two …

Planar Hall effect with sixfold oscillations in a Dirac antiperovskite

D Huang, H Nakamura, H Takagi - Physical Review Research, 2021 - APS
The planar Hall effect (PHE), wherein a rotating magnetic field in the plane of a sample
induces oscillating transverse voltage, has recently garnered attention in a wide range of …

Forming-Free Resistive Switching in Multiferroic BiFeO3 thin Films with Enhanced Nanoscale Shunts

X Ou, Y Shuai, W Luo, PF Siles, R Kögler… - … applied materials & …, 2013 - ACS Publications
A controlled shunting of polycrystalline oxide thin films on the nanometer length scale opens
the door to significantly modify their transport properties. In this paper, the low energy Ar+ …

Anisotropic magneto-transport properties of electron gases at SrTiO3 (111) and (110) surfaces

L Miao, R Du, Y Yin, Q Li - Applied Physics Letters, 2016 - pubs.aip.org
Electron gases at the surfaces of insulating (111)-and (110)-oriented SrTiO3 (STO) single
crystals have been created using Arþ-irradiation and their magneto-transport properties are …

Coexistence of two-dimensional and three-dimensional Shubnikov–de Haas oscillations in Ar-irradiated KTaO

S Harashima, C Bell, M Kim, T Yajima, Y Hikita… - Physical Review B …, 2013 - APS
We report electron do** in the surface vicinity of KTaO 3 by inducing oxygen vacancies via
Ar+ irradiation. The doped electrons have high mobility (> 10 4 cm 2/V s) at low …

Large increase in photo-induced conductivity of two-dimensional electron gas at SrTiO3 surface with BiFeO3 top** layer

P Laohana, S Polin, W **data, A Rasritat… - Applied Physics …, 2022 - pubs.aip.org
In this work, we study and compare the photo-induced conductivity of a two-dimensional
electron gas (2DEG) at the bare surface of SrTiO 3 (STO) and in the heterostructure of BiFeO …