From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

Facing the computing demands of Internet of things (IoT) and artificial intelligence (AI), the
cost induced by moving the data between the central processing unit (CPU) and memory is …

The voltage-gate-assisted spin-orbit-torque (VGSOT) writing scheme combines the
advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit-torque (SOT) …

Magnetic random-access memory that uses magnetic tunnel junction memory cells is a high-
performance, non-volatile memory technology that goes beyond traditional charge-based …

Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …

We fabricated a quadruple-interface perpendicular magnetic tunnel junction (MTJ)(Quad-
MTJ) down to 33 nm using physical vapor-deposition, reactive ion etching, and damage …

Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is a non-volatile
memory technology with a unique combination of speed, endurance, density and ease of …

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive
Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …

We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque
magnetoresistive random access memory (STT-MRAM) devices by using double spin …

A drift-diffusion approach to coupled spin and charge transport has been commonly applied
to determine the spin-transfer torque acting on the magnetization in metallic valves. This …