Being direct wide bandgap, III‐nitride (III‐N) semiconductors have many applications in
optoelectronics, including light‐emitting diodes, lasers, detectors, photocatalysis, etc …

Unlike in the bulk, at the nanoscale shape dictates properties. The imperative to understand
and predict nanocrystal shape led to the development, over several decades, of a large …

The micro-and nanostructures of III-nitride semiconductors captivate strong interest owing to
their distinctive properties and myriad potential applications. Nevertheless, challenges …

We have investigated the optical properties of heterostructured InGaN platelets aiming at red
emission, intended for use as nano-scaled light-emitting diodes. The focus is on the …

Miniaturization of light-emitting diodes (LEDs) with sizes down to a few micrometers has
become a hot topic in both academia and industry due to their attractive applications on self …

This paper reviews recent progress and key challenges in process and reliability for high-
performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS …

MicroLED technology is expected to be the technology of choice for next-generation
displays. Its advantages in various applications are reviewed. The challenges of microLED …

Yellow-green luminescence (YGL) competes with near-bandgap emission (NBE) for carrier
recombination channels, thereby reducing device efficiency; yet uncovering the origin of …

We present a study of the optical properties of various steps in the process of fabricating
micro light-emitting diodes (μ-LEDs) based on quantum wells embedded in micron-sized …

Second harmonic generation (SHG) in optical materials serves as important techniques for
laser source generations in awkward spectral ranges, physical identities of materials in …