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Quantum dot heterostructures: fabrication, properties, lasers
In the present review we summarize original results where 1) we have experimentally
discovered a novel class of spontaneously ordered nanostructures, namely equilibrium …
discovered a novel class of spontaneously ordered nanostructures, namely equilibrium …
[PDF][PDF] Гетероструктуры с квантовыми точками: получение, свойства, лазеры
НН Леденцов, ВМ Устинов, ВА Щукин… - Физика и техника …, 1998 - journals.ioffe.ru
Дан обзор оригинальных результатов, в которых: 1) экспериментально открыт новый
класс спонтанно упорядоченных наноструктур—равновесные массивы трехмерных …
класс спонтанно упорядоченных наноструктур—равновесные массивы трехмерных …
[Књига][B] Quantum dot heterostructures
Quantum Dot Heterostructures Dieter Bimberg, Marius Grundmann and Nikolai N.
Ledentsov Institute of Solid State Physics, Technische Universität Berlin, Germany Quantum …
Ledentsov Institute of Solid State Physics, Technische Universität Berlin, Germany Quantum …
Electronic and optical properties of strained quantum dots modeled by 8-band k⋅ p theory
We present a systematic investigation of the elastic, electronic, and linear optical properties
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
InGaAs-GaAs quantum-dot lasers
Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well
(QW) and QW wire lasers due to their delta like density of states. Record threshold current …
(QW) and QW wire lasers due to their delta like density of states. Record threshold current …
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
Carrier relaxation and recombination in self-organized InAs/GaAs quantum dots (QD's) is
investigated by photoluminescence (PL), PL excitation (PLE), and time-resolved PL …
investigated by photoluminescence (PL), PL excitation (PLE), and time-resolved PL …
Simultaneous two-state lasing in quantum-dot lasers
The authors demonstrate simultaneous lasing at 2 well-sepd. wavelengths in self-
assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) …
assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) …
Carrier thermal escape and retrap** in self-assembled quantum dots
The effects of carrier thermal escape and retrap** on the temperature dependence of the
photoluminescence of InAs/GaAs self-assembled quantum dots are investigated. A …
photoluminescence of InAs/GaAs self-assembled quantum dots are investigated. A …
The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers
Temperature invariant output slope efficiency and threshold current (T 0=∞) in the
temperature range of 5–75 C have been measured for 1.3 μm p-doped self-organized …
temperature range of 5–75 C have been measured for 1.3 μm p-doped self-organized …
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
TC Newell, DJ Bossert, A Stintz, B Fuchs… - IEEE Photonics …, 2002 - ieeexplore.ieee.org
Amplified spontaneous emission measurements are investigated below threshold in InAs
quantum-dot lasers emitting at 1.22 μm. The dot layer of the laser was grown in a strained …
quantum-dot lasers emitting at 1.22 μm. The dot layer of the laser was grown in a strained …