The cubic polytype (3C-) of silicon carbide (SiC) is an emerging semiconductor technology
for power devices. The featured isotropic material properties along with the wide band gap …

H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or
switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier …

(57) ABSTRACT A lateral junction diode device includes a substrate having at least a
semiconductor surface layer. A depletion-mode LDMOS device is in the semiconductor …

The present invention provides a semiconductor device comprising a substrate including an
active region and an edge region and containing a semiconductor doped with impurities …

A device includes a laterally diffused MOSFET, which in turn includes n-type source and
drain regions in ap-type semiconductor substrate. A gate electrode is located over the …

Overvoltage protection circuits are provided. In some embodiments, an overvoltage
protection circuit includes a first diode made of a first semiconductor material having a …

Overvoltage protection circuits are provided. In some embodiments, an overvoltage
protection circuit includes a first diode made of a first semiconductor material having a …

A silicon carbide MOSFET device that includes a silicon carbide substrate of a first dopant
type; a first silicon carbide layer of the first dopant type on top of the silicon carbide substrate; …

A power semiconductor device includes a substrate, including an active region and edge
regions, including a semiconductor layer of a first conductive type including silicon carbide …

One embodiment provides a semiconductor device. The device comprises a substrate
having a first face and a second face, a well region, a source region disposed in the well …