Capacitors represent the largest obstacle to dynamic random-access memory (DRAM)
technology evolution because the capacitor properties govern the overall operational …

An integrated memory cell with a memristor and a trilayer crested barrier selector, showing
repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer …

Capacitor structures utilized in modern dynamic random access memory (DRAM) cells
require the conformal growth of high-k films on electrode materials. In this context, the atomic …

In general, the electronic and optical properties of oxide films can significantly benefit from
highly textured crystallinity. However, oxide films grown by atomic layer deposition (ALD), a …

A crossbar array using resistive switching random‐access memory requires a selector
device to prevent leakage current. However, the high current flow during the electroforming …

The effects of Al do** in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the
evolutions of their crystallographic phases, grain sizes, and electric properties, such as their …

Phase transition of HfO 2 thin film has been investigated to demonstrate desirable electrical
properties, such as high dielectric constant or ferroelectricity, however, the most of results …

A Y-doped HfO 2 thin film deposited using a cocktail precursor for a DRAM capacitor
dielectric application was investigated. It has been difficult to adapt HfO 2, a potential high …

MoO2, a conductive metal oxide, has attracted considerable attention as an electrode
material in metal–insulator–metal (MIM) capacitors owing to its crystallinity and high work …

The nano-sized Ti 1− x Zn x O 2 system (0.01≤ x≤ 1.0) was synthesized by the sol-gel
route. A combination of techniques such as X-ray diffraction, electron microscopy, vibrational …