A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects

D Kaur, M Kumar - Advanced optical materials, 2021 - Wiley Online Library
With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …

Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Review of Ga2O3-based optoelectronic devices

D Guo, Q Guo, Z Chen, Z Wu, P Li, W Tang - Materials Today Physics, 2019 - Elsevier
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …

Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging

Y Qin, LH Li, Z Yu, F Wu, D Dong, W Guo… - Advanced …, 2021 - Wiley Online Library
The growing demand for scalable solar‐blind image sensors with remarkable photosensitive
properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) …

A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

Z Liu, W Tang - Journal of Physics D: Applied Physics, 2023 - iopscience.iop.org
Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in many solid-state
DUV optoelectronics, and their success relies on continuous innovations in semiconductor …

Work function tunable laser induced graphene electrodes for Schottky type solar-blind photodetectors

C Wu, F Wu, H Hu, C Ma, J Ye, S Wang, H Wu… - Applied Physics …, 2022 - pubs.aip.org
Laser-induced graphene (LIG) is a simple, environmentally friendly, efficient, and less costly
method, as well as can form various shapes on a flexible substrate in situ without the use of …

Ultrahigh Gain Solar Blind Avalanche Photodetector Using an Amorphous Ga2O3-Based Heterojunction

Y Wang, H Li, J Cao, J Shen, Q Zhang, Y Yang… - ACS …, 2021 - ACS Publications
Solar blind photodetectors with a cutoff wavelength within the 200–280 nm region is
attracting much attention due to their potential civilian and military applications. The …

Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications

X Hou, Y Zou, M Ding, Y Qin, Z Zhang… - Journal of Physics D …, 2020 - iopscience.iop.org
Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

Pt/AlGaN nanoarchitecture: toward high responsivity, self-powered ultraviolet-sensitive photodetection

D Wang, X Liu, S Fang, C Huang, Y Kang, H Yu… - Nano Letters, 2020 - ACS Publications
Energy-saving photodetectors are the key components in future photonic systems.
Particularly, self-powered photoelectrochemical-type photodetectors (PEC–PDs), which …

Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

BR Tak, S Kumar, AK Kapoor, D Wang… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …