Antiferromagnetic materials, which have drawn considerable attention recently, have
fascinating features: they are robust against perturbation, produce no stray fields, and exhibit …

Exchange bias has been investigated for more than half a century and several insightful
reviews, published around the year 2000, have already summarized many key experimental …

Using first-principles transport calculations, we predict that the anisotropic
magnetoresistance (AMR) of single-crystal Co x Fe 1-x alloys is strongly dependent on the …

The demand for emerging applications at the terahertz frequencies motivates the
development of novel and multifunctional devices for the generation and manipulation of …

We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with
fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall …

Recently, the planar Hall effect has attracted tremendous interest. In particular, an in-plane
magnetization can induce an anomalous planar Hall effect with a 2 π/3 period for hexagon …

Strong magnetic anisotropy is crucial for spintronic devices, but the strength of in-plane
anisotropy (IMA) has constrained its applications in magnetic storage devices in contrast …

Antiferromagnetic transition metal oxides are an established and widely studied materials
system in the context of spin-based electronics, commonly used as passive elements in …

The epitaxial growth of ultrathin Fe film on Si (111) surface provides an excellent opportunity
to investigate the contribution of magnetic anisotropy to magnetic behavior. Here, we …

The antiferromagnet is considered to be a promising hosting material for the next generation
of magnetic storage due to its high stability and stray-field-free property. Understanding the …