In the last three decades, study has seen the evolution of metal oxide semiconductor (MOS)
devices as device geometries have shrunk in line with Moore's law. This device shrunk …

An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …

A series of highly active MnO2@ REO x (RE= Gd, Sm, Ce, and La) catalysts were
successfully synthesized via in situ growth on the surface of MnO2, wherein the rare earth …

A double heterojunction solar cell consisting of a solar absorber and electron/hole transport
layers (ETL/HTL) is ideally efficient and can contribute to the exploitation of solar energy …

This paper reports the influences of gamma radiation on the structural, electrical, and
chemical characteristics of erbium oxide (Er 2 O 3) thin films and the possible mechanisms …

High-k rare-earth samarium oxide (Sm 2 O 3) films are formed on n-GaN surface and
analyzed its compositional properties by XPS measurements. XPS results specify that the …

Hexagonal phase Sm (OH) 3 nanoroll sticks were first synthesized by hydrothermal method,
and cubic phase Sm 2 O 3 nanoroll sticks were obtained by post-annealing treatment at …

Sm 2 O 3 microspheres were prepared by the coprecipitation method, using samarium
nitrate and formic acid. The size of the microspheres was in the range 1–6 μm; however …

As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace,
computer architecture is transitioning from compute-intensive to memory-intensive …

Multilevel resistive switching was observed in random access memory device using
amorphous SmGdO 3 (SGO) ternary oxide thin films. Non-volatile and stable 4-level …