Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick
amorphous Si (a-Si) films deposited on glass substrates. The EC starts from the edges of the …

Using dynamic transmission electron microscopy we measure nucleation and growth rates
during laser driven crystallization of amorphous germanium (a-Ge) films supported by silicon …

The degree of destruction and evaporation of metal films (Au and Ti, thickness∼ 50 nm) with
a gel layer during laser transfer of small volumes of a gel substrate is estimated depending …

Laser-induced functionalization using excimer laser irradiation has been widely applied to
transparent conductive oxide films. However, exploring suitable irradiation conditions is time …

We succeed in the formation of micrometer-order-thick polycrystalline silicon (poly-Si) films
through the flash-lamp-induced liquid-phase explosive crystallization (EC) of precursor a-Si …

Hydrogenated amorphous silicon (a-Si: H) thin films have been considered for use in solar
cell applications because of their significantly reduced cost compared with crystalline bulk …

During the Joule-heating induced crystallization (JIC) process of amorphous silicon for
display applications, its phase transformation from amorphous to polycrystalline phases …

Excimer laser crystallization (ELC) is commonly employed to fabricate low-temperature
polycrystalline silicon. A time-resolved in-situ optical system with nanosecond response time …

Influence of wavelengths and beam profiles of a pulsed Nd3+: YAG laser on the formation of
a polycrystalline-silicon (poly-Si) on a-Si thin film is investigated. Two sets of samples of …

The influences of Si film thickness and substrate temperature on the melt duration of molten
Si during excimer laser crystallization (ELC) have been theoretically and experimentally …