Surface defects in 4H-SiC homoepitaxial layers
L Zhao - Nanotechnology and Precision Engineering, 2020 - pubs.aip.org
Although a high-quality homoepitaxial layer of 4H-silicon carbide (4H-SiC) can be obtained
on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a …
on a 4° off-axis substrate using chemical vapor deposition, the reduction of defects is still a …
Surface uniformity of wafer-scale 4H-SiC epitaxial layers grown under various epitaxial conditions
S Zhao, J Wang, G Yan, Z Shen, W Zhao, L Wang… - Coatings, 2022 - mdpi.com
Wide band gap semiconductor 4H-SiC is currently widely used in the manufacture of high-
frequency and high-voltage power devices. The size of commercial 4H-SiC wafers is …
frequency and high-voltage power devices. The size of commercial 4H-SiC wafers is …
Analysis and Review of Influencing Factors of SiC Homo-Epitaxial Wafers Quality.
GUO Yu, LIU Chunjun, Z **nhe… - Journal of Synthetic …, 2024 - search.ebscohost.com
The performance and lifetime of silicon carbide (SiC) devices are directly affected by the
quality of SiC epitaxial films. On the one hand, the quality of SiC epitaxial films is affected by …
quality of SiC epitaxial films. On the one hand, the quality of SiC epitaxial films is affected by …
[PDF][PDF] 碳化硅同质外延质量影响因素的分析与综述
郭钰， 刘春俊， 张新河， 沈鹏远， 张博… - Journal of Synthetic …, 2024 - researching.cn
碳化硅(SiC) 外延质量会直接影响器件的性能和使用寿命, 在SiC 器件应用中起到关键作用. SiC
外延质量一方面受衬底质量的影响, 例如衬底的堆垛层错(SF) 会贯穿到外延层中形成条状层错 …
外延质量一方面受衬底质量的影响, 例如衬底的堆垛层错(SF) 会贯穿到外延层中形成条状层错 …
Detection of Dislocations Using X-Ray Diffraction Imaging (Topography) KOH Etching and Their Evolution after Epitaxial Growth in 4H-SiC
H Das, S Sunkari, J Justice, D Hamann… - ECS …, 2021 - iopscience.iop.org
This work reports the characterization and analysis of various types of SiC substrate wafers
by a high throughput (2 wafers/hour) X-ray diffraction imaging (XRDI) system. Quantitative …
by a high throughput (2 wafers/hour) X-ray diffraction imaging (XRDI) system. Quantitative …