In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

A variety of novel behavioral modeling techniques have been reported to accurately capture
the nonlinear characteristics of GaN devices. For the purpose of describing GaN HEMT large …

A number of machine learning (ML) algorithm based small signal modeling of Gallium
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …

This article presents accurate, efficient and reliable small-signal model parameter extraction
approaches applied to Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) …

Artificial Neural Network (ANN) is frequently utilized for the development of behavioral
models of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). However …

An improved GaN high electron mobility transistor (HEMT) small‐signal equivalent model is
proposed. To model the effects of extrinsic parameters that vary with the bias voltage, RL …

This paper presents an investigation into the modeling of Gallium Nitride (GaN) High
Electron Mobility Transistors (HEMTs) using multiple Machine Learning (ML) algorithms …

This work presents an accurate, scalable, and efficient hybrid machine learning (ML) and
neural network (NN) model based, cross‐platform application to analyze and estimate …

This paper uses the Adaptive Neuro-Fuzzy Inference System (ANFIS) to investigate and
propose a new alternative behavioral modeling technique for microwave power transistors …

This paper develops and presents a CAD deployability of small-signal model of Gallium
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …