A field effect transistor can be used as a nonlinear element for the resonant detection of
incident terahertz (THz) radiation at room temperature. The excitation of the plasma modes …

We derive at first-order the carrier and velocity conservation equations and a pseudo-2D
(P2D) Poisson equation in order to obtain an analytical model suitable for the study of the …

Hydrodynamic calculations of the components of small-signal admittance and impedance
matrix are performed for InGaAs HEMT. Modifications of high-frequency small-signal …

Several devices based on 2D materials have become interesting for high-frequency
applications especially sensors, amplifiers and modulators of Terahertz frequencies …

We present an analytical model suitable for the study of the plasma modes in gated
semiconductor slabs of arbitrary thickness. A pseudo-two-dimensional Poisson equation …

Here, we report on numerical modelling of AlGaN/GaN HEMT terahertz detectors using a
two-dimensional solver based on three Boltzmann transport equation (BTE) moments and …

By numerical simulations, we investigate the large-signal photoresponse of InGaAs high
electron mobility transistors submitted to THz radiations. The used pseudo-2D hydrodynamic …

In this paper, we present an analytical approach for the study of the small-signal response of
nanometric field-effect transistor at terahertz frequencies. One-dimensional hydrodynamic …

A study of the small-signal response of a Field-Effect Transistor connected to a purely
reactive load is proposed. In particular, this model, using the equivalent admittances …

Electron transport and drain current noise in the wurtzite GaN MOSFET have been studied
by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and …