Dielectric surface passivation for silicon solar cells: A review

RS Bonilla, B Hoex, P Hamer… - physica status solidi …, 2017 - Wiley Online Library
Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many
places are now providing a substantial portion of electricity generation. Further adoption of …

Band-bending induced passivation: high performance and stable perovskite solar cells using a perhydropoly (silazane) precursor

H Kanda, N Shibayama, AJ Huckaba, Y Lee… - Energy & …, 2020 - pubs.rsc.org
Surface passivation of the perovskite photo absorber is a key factor to improve the
photovoltaic performance. So far robust passivation strategies have not yet been revealed …

[HTML][HTML] Surface passivation approaches for silicon, germanium, and III–V semiconductors

RJ Theeuwes, WMM Kessels, B Macco - Journal of Vacuum Science & …, 2024 - pubs.aip.org
Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

[HTML][HTML] Taking monocrystalline silicon to the ultimate lifetime limit

T Niewelt, A Richter, TC Kho, NE Grant… - Solar Energy Materials …, 2018 - Elsevier
A central quantity to assess the high quality of monocrystalline silicon (on scales beyond
mere purity) is the minority charge carrier lifetime. We demonstrate that the lifetime in high …

Modelling of Kelvin probe surface voltage and photovoltage in dielectric-semiconductor interfaces

RS Bonilla - Materials Research Express, 2022 - iopscience.iop.org
The characterisation of dielectric-semiconductor interfaces via Kelvin probe surface voltage
and photovoltage has become a widespread method of extracting the electrical properties …

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

RS Bonilla, I Al-Dhahir, M Yu, P Hamer… - Solar Energy Materials …, 2020 - Elsevier
Abstract The Si–SiO 2 interface has and will continue to play a major role in the
development of silicon photovoltaic devices. This work presents a detailed examination of …

Double-diode model carrier lifetime-based internal recombination parameter analysis and efficiency prediction of crystalline Si solar cells

KH Min, H Song, MG Kang, SH Lee, S Park - Solar Energy, 2024 - Elsevier
With the continuous and significant advancements in the performance of crystalline silicon (c-
Si) solar cells, an effective method for a detailed analysis of the efficiency loss factors is …

Simple and versatile UV-ozone oxide for silicon solar cell applications

S Bakhshi, N Zin, H Ali, M Wilson, D Chanda… - Solar Energy Materials …, 2018 - Elsevier
Semiconductor surface clean is sometimes perceived as costly but long recognized as
pivotal in determining the final semiconductor device performance and yield. In this …

Understanding and optimizing EBIC pn-junction characterization from modeling insights

R Zhou, M Yu, D Tweddle, P Hamer, D Chen… - Journal of Applied …, 2020 - pubs.aip.org
In this paper, the physical mechanisms involved in electron-beam-induced current (EBIC)
imaging of semiconductor pn-junctions are reviewed to propose a model and optimize the …

Ion‐Charged Dielectric Nanolayers for Enhanced Surface Passivation in High Efficiency Photovoltaic Devices

I Al‐Dhahir, X Niu, M Yu, S McNab, Y Lin… - Advanced Materials …, 2023 - Wiley Online Library
The power conversion efficiency of solar cells is strongly impacted by an unwanted loss of
charge carriers occurring at semiconductor surfaces and interfaces. Here the use of ion …