Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances
The incubation of strained nano-system in the form of tri-layered structure as nanowire
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB
The Reaction-Diffusion-Drift model is validated as a trap generation framework during Bias
Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent …
Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
Phonon stability boundary and deep elastic strain engineering of lattice thermal conductivity
Recent studies have reported the experimental discovery that nanoscale specimens of even
a natural material, such as diamond, can be deformed elastically to as much as 10% tensile …
a natural material, such as diamond, can be deformed elastically to as much as 10% tensile …
Design optimization of junctionless bottom spacer tapered FinFET: Device to circuit level implementation
This manuscript for the first time integrates the traditional FinFET architecture involving
Bottom spacer (BS), Tapering, and Junctionless (JL) concepts to investigate the device …
Bottom spacer (BS), Tapering, and Junctionless (JL) concepts to investigate the device …
Modeling of DC-AC NBTI stress-recovery time kinetics in P-channel planar bulk and FDSOI MOSFETs and FinFETs
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs
An ultrafast (10ps delay) characterization method is used to measure threshold voltage shift
(ΔV T) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress …
(ΔV T) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress …
TCAD Framework for HCD Kinetics in Low VD Devices Spanning Full VG/VD Space
The time kinetics of hot carrier degradation (HCD) is modeled using a reaction diffusion drift
(RDD) framework. It is incorporated into Sentaurus Device TCAD and validated using …
(RDD) framework. It is incorporated into Sentaurus Device TCAD and validated using …
Analysis of sheet dimension (W, L) dependence of NBTI in GAA-SNS FETs
Ultra-fast (Iuus delay) measured threshold voltage shift (ΔV T) due to Negative Bias
Temperature Instability (NBTI) in Gate All Around Stacked Nano-Sheet (GAA-SNS) Field …
Temperature Instability (NBTI) in Gate All Around Stacked Nano-Sheet (GAA-SNS) Field …
A model for hole trap**-detrap** kinetics during NBTI in p-Channel FETs
The contribution of hole trap** and detrap** (ΔV_HT) to overall threshold voltage shift
(ΔV_T) during and after Negative Bias Temperature Instability (NBTI) stress is obtained …
(ΔV_T) during and after Negative Bias Temperature Instability (NBTI) stress is obtained …