Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs [311] B substrate
N Nishiyama, A Mizutani, N Hatori… - IEEE Journal of …, 1999 - ieeexplore.ieee.org
We have demonstrated an oxide confinement polarization controlled vertical-cavity surface-
emitting laser (VCSEL) grown on a GaAs [311] B substrate. The polarization state was well …
emitting laser (VCSEL) grown on a GaAs [311] B substrate. The polarization state was well …
Strain-induced birefringence in vertical-cavity semiconductor lasers
AKJ Van Doom, MP Van Exter… - IEEE journal of …, 1998 - ieeexplore.ieee.org
We describe a new technique to study and control the polarization properties of planar
vertical-cavity semiconductor lasers. The technique consists of the application of a …
vertical-cavity semiconductor lasers. The technique consists of the application of a …
An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) A substrate having low threshold and stable polarization
M Takahashi, P Vaccaro, K Fujita… - IEEE Photonics …, 1996 - ieeexplore.ieee.org
We have fabricated an InGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) grown
on a GaAs (311) A substrate by molecular beam epitaxy (MBE) and demonstrated …
on a GaAs (311) A substrate by molecular beam epitaxy (MBE) and demonstrated …
Electrical polarization control of vertical-cavity surface-emitting lasers using polarized feedback and a liquid crystal
CI Wilkinson, J Woodhead, JEF Frost… - Ieee Photonics …, 1999 - ieeexplore.ieee.org
We report electrical control of the polarization state of a vertical-cavity surface-emitting laser
(VCSEL), The VCSEL is subject to strong external optical feedback (up to 6% of emission) …
(VCSEL), The VCSEL is subject to strong external optical feedback (up to 6% of emission) …
[BOOK][B] Semiconductor Lasers II: Materials and Structures
E Kapon - 1999 - books.google.com
This volume presents state-of-the-art information on several important material systems and
device structures employed in modern semiconductor lasers. The first two chapters discuss …
device structures employed in modern semiconductor lasers. The first two chapters discuss …
A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311) B substrate
A Mizutani, N Hatori, N Nishiyama… - IEEE Photonics …, 1998 - ieeexplore.ieee.org
We have demonstrated a GaAs (311) B vertical-cavity surface-emitting laser (VCSEL) with a
threshold current as low as 250 μA, which is the lowest value ever reported for that on non …
threshold current as low as 250 μA, which is the lowest value ever reported for that on non …
Growth of vertical-cavity surface-emitting laser structures on GaAs (311) B substrates by metalorganic chemical vapor deposition
K Tateno, Y Ohiso, C Amano, A Wakatsuki… - Applied physics …, 1997 - pubs.aip.org
Vertical-cavity surface-emitting laser (VCSEL) structures have been grown on GaAs (311) B
substrates by metalorganic chemical vapor deposition. C-doped GaAs and AlAs layers with …
substrates by metalorganic chemical vapor deposition. C-doped GaAs and AlAs layers with …
Second-harmonic generation in vertical-cavity surface-emitting laser
N Yamada, Y Ichimura, S Nakagawa… - Japanese journal of …, 1996 - iopscience.iop.org
A concept for a short-wavelength compact laser is proposed, in which second-harmonic
coherent light is produced by converting fundamental light lased in a vertical-cavity surface …
coherent light is produced by converting fundamental light lased in a vertical-cavity surface …
Coupled-mode description for the polarization state of a vertical-cavity semiconductor laser
AKJ Van Doorn, MP Van Exter, AM Van Der Lee… - Physical Review A, 1997 - APS
For symmetry reasons, vertical-cavity semiconductor lasers might be expected to show
polarization isotropy. Practical devices, however, operate in a well-defined polarization …
polarization isotropy. Practical devices, however, operate in a well-defined polarization …
An 850-nm InAlGaAs strained quantum-well vertical-cavity surface-emitting laser grown on GaAs (311) B substrate with high-polarization stability
The polarization stability of 850-nm InAlGaAs strained quantum-well (QW) vertical-cavity
surface-emitting laser (VCSEL) grown on GaAs (311) B substrate was investigated by …
surface-emitting laser (VCSEL) grown on GaAs (311) B substrate was investigated by …