GaAs/Al x Ga (1− x) As quantum well lasers have been demonstrated via organometallic
chemical vapor deposition on relaxed graded Ge/Ge x Si (1− x) virtual substrates on Si. A …

The current–voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic
vapor-phase epitaxy on Ge substrates were determined in the temperature range 80–300 K …

The realization of semiconductor lasers on Si substrates will enable the fabrication of
complex optoelectronic circuits. This will permit the creation of the long-dreamed chip-to …

The nucleation and growth of GaAs films on offcut (001) Ge wafers by solid source molecular
beam epitaxy (MBE) is investigated, with the objective of establishing nucleation conditions …

The large-scale use of photovoltaics is slowly becoming a reality. Small scale (∼ 10–20 kW)
power systems using Si solar cells now compete with fossil-fueled electric generators for …

The large-scale use of photovoltaics is becoming a reality. The total worldwide solar cell
production in 2009 was> 10 gigawatts (GW), mostly in the form of flat-plate Si solar cells …

Monolithic integration of III-V compounds into high density Si integrated circuits is a key
technological challenge for the next generation of optoelectronic devices. In this work, we …

We demonstrate the influence of the arsine partial pressure (p (AsH 3)) on the quality of a
GaAs layer grown on Ge substrate by metal organic chemical vapor deposition. The GaAs …

The self-annihilation of antiphase boundaries (APBs) in GaAs epitaxial layers grown by low-
pressure metal-organic vapor-phase epitaxy on Ge substrates is studied by several …

The self-annihilation of antiphase boundaries (APBs) in GaAs epilayers is studied
experimentally by following the course of the evolution of the APBs in two ways:(1) growing …