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[HTML][HTML] Junctionless transistors: State-of-the-art
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Junctionless multiple-gate transistors for analog applications
This paper presents the evaluation of the analog properties of nMOS junctionless (JL)
multigate transistors, comparing their performance with those exhibited by inversion-mode …
multigate transistors, comparing their performance with those exhibited by inversion-mode …
Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors
This paper proposes a drain current model for triple-gate n-type junctionless nanowire
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
Study and analysis of advanced 3D multi-gate junctionless transistors
As the IC technology is evolving very rapidly, the feature size of the device has been
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
migrating to sub-nanometre regime for achieving the high packing density. To continue with …
Threshold voltage in junctionless nanowire transistors
This work presents a physically based analytical model for the threshold voltage in
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …
The junctionless transistor
JP Colinge - Emerging devices for low-power and high …, 2018 - taylorfrancis.com
The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …
placed between the source and drain contacts and is, therefore, the simplest transistor …
Gate-all-around charge plasma-based dual material gate-stack nanowire FET for enhanced analog performance
In this paper, a gate-all-around (GAA) charge plasma-based do**less dual material gate
nanowire FET is proposed (CP-DM). This structure is further explored by adding gate-stack …
nanowire FET is proposed (CP-DM). This structure is further explored by adding gate-stack …
Impact of thin high-k dielectrics and gate metals on RF characteristics of 3D double gate junctionless transistor
RF performance of 3D double gate junctionless transistor (JLT) is investigated considering
thin high-k dielectrics and gate metals. The 3D double gate junctionless transistor (JLT) with …
thin high-k dielectrics and gate metals. The 3D double gate junctionless transistor (JLT) with …
Enhanced performance of double gate junctionless field effect transistor by employing rectangular core–shell architecture
This paper proposes a p-type double gate junctionless field effect transistor having opposite
do** in the core with that of the silicon body referring to rectangular core–shell (RCS) …
do** in the core with that of the silicon body referring to rectangular core–shell (RCS) …
Twin gate, vertical slit FET (VeSFET) for highly periodic layout and 3D integration
This paper introduces a new device architecture, which can be shared by a variety of
different types of transistors including a new 3D junctionless N-channel and P-channel …
different types of transistors including a new 3D junctionless N-channel and P-channel …